Front-side diamond deposition on the GaN membranes

0540751 - FZÚ 2021 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Izsák, Tibor - Vanko, G. - Držík, M. - Kasemann, S. - Zehetner, J. - Vojs, M. - Zaťko, B. - Potocký, Štěpán - Kromka, Alexander
Front-side diamond deposition on the GaN membranes.
Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. New York: IEEE, 2020 - (Vanko, G.; Izsák, T.), s. 42-45. ISBN 978-1-7281-9776-0.
[International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./. Smolenice (SK), 11.10.2020-14.10.2020]
Grant CEP: GA MŠMT LM2018110; GA MŠMT(CZ) 8X20035; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * GaN * CVD * stress
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We present technological issues in the deposition of diamond films on the GaN membranes. Many wrinkles and the thicker diamond layer were observed at the membrane centre and poor quality diamond outside the membrane area. The deflection of the membranes were analyzed by a bulging method using white light interferometry. The membrane bending was discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials. Optimized technological procedure was proposed to obtain both-side diamond-coated GaN membranes with minimized effect of wrinkling and induced residual stress.
Trvalý link: http://hdl.handle.net/11104/0318357