SIMS studies of MOVPE GaN/InGaN scintilator nano-structures

0539244 - FZÚ 2021 RIV CZ eng A - Abstrakt
Hulicius, Eduard - Dominec, Filip - Hospodková, Alice - Pangrác, Jiří - Bábor, P.
SIMS studies of MOVPE GaN/InGaN scintilator nano-structures.
Proceedings of Abstracts - Nanocon 2019. Ostrava: Tanger Ltd., 2019 - (Shrbená-Váňová, J.). s. 81-81. ISBN 978-80-87294-94-9.
[Nanocon 2019 International Conference on Nanomaterials - Research & Application /11./. 16.10.2019-18.10.2019, Brno]
Grant CEP: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: SIMS * InGaN/GaN heterostructure * scintillators * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Secondary ion mass spectrometry (SIMS) analysis is a powerful tool for determination material composition and impurity concentration at different parts of structure with a several nm resolution and down to 10E16 cm-3 for many elements. We can estimate the thickness of nanostructure layer and exactly measure their periodicity. Optimization of the SIMS technique can improve our results. Measuring the impurity concentration profiles close to surface, we can estimate surface roughness, in our case the V-pits depth. We can measure impurity concentration profiles with high accuracy.
Trvalý link: http://hdl.handle.net/11104/0316917