Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star

0539099 - FZÚ 2021 RIV FR eng J - Článek v odborném periodiku
Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Kupčík, Jaroslav - Mortet, Vincent - Taylor, Andrew - Ashcheulov, Petr - Volodin, V.A.
Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star.
European Physical Journal-Applied Physics. Roč. 88, č. 3 (2020), s. 1-6, č. článku 30302. ISSN 1286-0042. E-ISSN 1286-0050
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: CVD * hydrogenated amorphous silicone carbide * Ge nanoparticles * thin film diodes * electroluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.993, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1051/epjap/2020190253

Hydrogenated amorphous substoichiometric silicon carbide (a-SiC:H) diodes with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi‐transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of both diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-Si1-xCx:H significantly deteriorates diode I-V characteristic.
Trvalý link: http://hdl.handle.net/11104/0316845