Positron structural analysis of ScN films deposited on MgO substrate

0539092 - FZÚ 2021 RIV PL eng J - Článek v odborném periodiku
More Chevalier, Joris - Horák, L. - Cichoň, Stanislav - Hruška, Petr - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A. - Bulíř, Jiří - Hubík, Pavel - Gedeonová, Zuzana - Lančok, Ján
Positron structural analysis of ScN films deposited on MgO substrate.
Acta Physica Polonica A. Roč. 137, č. 2 (2020), s. 209-214. ISSN 0587-4246. E-ISSN 1898-794X
Grant CEP: GA ČR GA17-05770S; GA MŠMT(CZ) LO1409
Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406; VAKUUM PRAHA(CZ) VAKUUM PRAHA 2019
Institucionální podpora: RVO:68378271
Klíčová slova: growth * direct band gap * nitrogen vacancies * adatom mobilities
Obor OECD: Coating and films
Impakt faktor: 0.577, rok: 2020
Způsob publikování: Open access
https://doi.org/10.12693/APhysPolA.137.209

Scandium nitride (ScN) is a semiconductor with a rocksalt-structure that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. Two ScN films of 118 nm and 950 nm thicknesses were deposited at the same conditions on MgO (001) substrate by reactive magnetron sputtering. Poly-orientation of films was observed with first an epitaxial growth on MgO and then a change in the orientation growth due to the decrease of the adatom mobility during the film growth. Positron lifetime measurements showed a high concentration of nitrogen vacancies in both films with a slightly higher concentration for the thicker ScN film. Presence of nitrogen vacancies explains the values of direct band gaps of 2.53 +/- 0.01 eV, and 2.56 +/- 0.01 eV which has been measured on ScN films of 118 nm and 950 nm thicknesses, respectively.
Trvalý link: http://hdl.handle.net/11104/0316840