Laser induced damage threshold of silicon with native and artificial SiO.sub.2./sub. layer

0538876 - FZÚ 2021 RIV CZ eng J - Článek v odborném periodiku
Sládek, Juraj - Mirza, M. Inam
Laser induced damage threshold of silicon with native and artificial SiO₂ layer.
MM Science Journal. Roč. 2019, Dec (2019), s. 3579-3584. ISSN 1803-1269
Grant CEP: GA MŠMT LO1602
Institucionální podpora: RVO:68378271
Klíčová slova: ultra-short laser ablation * laser spot size * silicon damage threshold * Gaussian beam * SiO₂ thin film
Obor OECD: Optics (including laser optics and quantum optics)
Způsob publikování: Open access

Spot size measurements of a 260 fs, 1030 nm focused spatially Gaussian pulsed laser beam were performed on a Silicon surface with native and thermally grown SiO2 layers using a widely known method of evaluating laser beam energy dependent damage area. Single pulse laser induced damage thresholds of both samples were also measured. Modification of the thermally grown SiO2 layer was analyzed in detail using optical, confocal and scanning electron microscopy. Restrictions in Gaussian beam spot size measurements on the samples with transparent coatings and several observable thresholds are discussed.
Trvalý link: http://hdl.handle.net/11104/0316619