Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga.sub.2./sub.O.sub.3./sub. studied by terahertz spectroscopy

0538408 - FZÚ 2021 RIV US eng J - Článek v odborném periodiku
Blumenschein, N. - Kadlec, Christelle - Romanyuk, Olexandr - Paskova, T. - Muth, J.F. - Kadlec, Filip
Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga₂O₃ studied by terahertz spectroscopy.
Journal of Applied Physics. Roč. 127, č. 16 (2020), s. 1-8, č. článku 165702. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA17-03662S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; NSF OISE(US) 1458427
Institucionální podpora: RVO:68378271
Klíčová slova: terahertz spectroscopy, * gallium oxide, * localized charge carriers
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.546, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1063/1.5143735

Dielectric and conducting properties of unintentionally doped bulk and Sn-doped thin film β-Ga2O3 samples were studied using time- domain terahertz spectroscopy. The low-temperature spectra of the unintentionally doped sample were fit using a model involving two oscillators. The parameters of one of them show an unusual temperature dependence, in particular, a pronounced increase in the oscillator strength upon heating above 50 K. This is interpreted as an absorption due to thermally activated charge carriers moving in localized potential minima linked to the unintentional doping. Upon heating, the influence of this optical conductivity mechanism strongly increases, and the sample becomes opaque in the THz range near 100 K. The nanocrystalline Sn-doped Ga2 O3 thin film sample exhibits a much higher optical conductivity than the unintentionally doped bulk sample, and its spectra are remarkably stable over a broad temperature range (4–750 K).

Trvalý link: http://hdl.handle.net/11104/0316213