Graphene prepared by chemical vapour deposition process

0538062 - FZÚ 2021 RIV DE eng J - Článek v odborném periodiku
Macháč, P. - Cichoň, Stanislav - Lapčák, L. - Fekete, Ladislav
Graphene prepared by chemical vapour deposition process.
Graphene Technology. Roč. 5, Feb (2020), s. 9-17. ISSN 2365-6301. E-ISSN 2365-631X
Institucionální podpora: RVO:68378271
Klíčová slova: graphene * CVD growth * transfer of graphene * band structure of graphene
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Způsob publikování: Omezený přístup
https://doi.org/10.1007/s41127-019-00029-6

The submitted work is focused on graphene preparation using the chemical vapour deposition method employing a cost-saving cold-wall reactor. Optimization of the parameters and conditions of the growth technology was pursued. We succeeded in preparing and transferring monolayer graphene onto a dielectric substrate and in studying its properties by various analytical methods in great detail. The transferred graphene material displays well-resolved band structure. The band structure evidences that undoped material was prepared, with Dirac points lying at the Fermi level.
Trvalý link: http://hdl.handle.net/11104/0315886