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Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride
- 1.0538022 - ÚFCH JH 2021 RIV GB eng J - Článek v odborném periodiku
Ivády, V. - Barcza, Gergely - Thiering, G. - Li, S. - Hamdi, H. - Chou, J.-P. - Legeza, Ö. - Gali, A.
Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride.
NPJ Computational. Roč. 6, č. 1 (2020), č. článku 41. E-ISSN 2057-3960
Institucionální podpora: RVO:61388955
Klíčová slova: quantum emitters * defect
Obor OECD: Physical chemistry
Impakt faktor: 12.241, rok: 2020
Způsob publikování: Open access
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are responsible for recently observed optically detected magnetic resonance signal. Here, we report ab initio analysis of the correlated electronic structure of this center by density matrix renormalization group and Kohn-Sham density functional theory methods. By establishing the nature of the bright and dark states as well as the position of the energy levels, we provide a complete description of the magneto-optical properties and corresponding radiative and non-radiative routes which are responsible for the optical spin polarization and spin dependent luminescence of the defect. Our findings pave the way toward advancing the identification and characterization of room temperature quantum bits in two-dimensional solids.
Trvalý link: http://hdl.handle.net/11104/0315856
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