Properties of yellow band in GaN layers

0537999 - FZÚ 2021 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Hubáček, Tomáš - Jarý, Vítězslav - Kuldová, Karla - Hospodková, Alice - Pangrác, Jiří - Hulicius, Eduard
Properties of yellow band in GaN layers.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 149-150. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: nitride semiconductors * GaN * luminescence * defects
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Luminescence properties of n-doped GaN layer, grown with specific growth condition to obtain high carbon concentration in layer, were studied. Room temperature PL spectrum showed very strong YB intensity and suppressed GaN excitonic band. Properties of YB were studied by low temperature PL measurement and decay time measurement. Shape of the YB was analysed with one-dimensional configuration coordinate model and it was shown that the YB properties are similar to properties of YB caused by carbon-related defect (CN). Our PL results are in a good agreement with SIMS analysis, where higher carbon concentration was detected. Decay time of YB is in the hundreds of microseconds. This value corresponds to published results of other groups. Low temperature PL measurement is a good tool for investigation the source of YB in different MOVPE grown GaN layers. Understanding of the origin of YB can help technologists to improve the growth process and eliminate YB source.
Trvalý link: http://hdl.handle.net/11104/0315830