Nitride semiconductors - properties and applications

0537995 - FZÚ 2021 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Oswald, Jiří - Dominec, Filip - Kuldová, Karla
Nitride semiconductors - properties and applications.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 32-36. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: nitride semiconductors * applications * LED * HEMT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Nitrogen became very important for semiconductor industry in last thirty years and many new light emitting or electronic applications are based on nitride semiconductors, such as blue or UV light emitting diodes (LEDs), laser diodes (LDs) or high electron mobility transistors (HEMTs) used for high power and high frequency applications. Very tough competition takes place in the field of electromobility where the winner is not decided, yet. However, a big increase is expected in GaN production connected with the new 5G network. Higher bandwidth will enable higher capacity, which means increased number of connected devices. This network will therefore have higher power requirements. GaN based HEMT circuits are supposed to be essential for 5G base stations.
Trvalý link: http://hdl.handle.net/11104/0315824