Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

0537993 - FZÚ 2021 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Kuldová, Karla - Dominec, Filip - Novotný, Radek - Hájek, František - Košutová, T. - Hospodková, Alice
Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 89-90. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: photoluminescence * nitride semiconductors * GaN * defects
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We describe macroscopic defects on InGaN/GaN multiple quantum well structures caused by accidental contamination with dust particles during the metalorganic vapour phase epitaxy. Gallium nitride and InGaN/GaN heterostructures are promising materials for many optoelectronic devices. During the preparation of these structures, great attention is paid to optimization of the growth parameters and to reduce the density of dislocations and point defects in this material. However, only a small number of studies were performed on macroscopic defects. Understanding the impact of each of the contaminating elements is not only important for sample diagnostics, but it also provides insight into the complex physical and chemical processes during epitaxy.We focus on the influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures and present a Raman spectroscopy study of macroscopic defect containing regions of the samples.
Trvalý link: http://hdl.handle.net/11104/0315819