Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties

0536301 - FZÚ 2021 RIV DE eng J - Článek v odborném periodiku
Holovský, Jakub - De Nicolás, S.M. - De Wolf, S. - Ballif, C.
Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties.
Advanced Materials Interfaces. Roč. 7, č. 20 (2020), s. 1-7, č. článku 2000957. ISSN 2196-7350. E-ISSN 2196-7350
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA18-24268S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: amorphous silicon * silicon heterojunction * solar cells * passivation * FTIR
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.147, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1002/admi.202000957

Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier‐lifetime measurements and carrier‐lifetime imaging. To gain insight, the a‐Si:H/c‐Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed from the point of hydrogen mono‐layer passivation of the c‐Si surface and from the perspectives of a‐Si:H bulk properties.
Trvalý link: http://hdl.handle.net/11104/0314095