High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films

0536230 - FZÚ 2021 RIV DE eng J - Článek v odborném periodiku
Stuchlíková, The-Ha - Stuchlík, Jiří - Remeš, Zdeněk - Taylor, Andrew - Mortet, Vincent - Ashcheulov, Petr - Gregora, Ivan - Krivyakin, G. - Volodin, V.
High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films.
Physica Status Solidi B. Roč. 257, č. 6 (2020), s. 1-6, č. článku 1900247. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: a-SiC:H * boron-doped diamond * fluorine-doped tin oxide * I-V characteristics * PIN diodes * BDD * FTO
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.710, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1002/pssb.201900247

a-SiC:H diode structures with different ratios of Si:C on transparent conductive boron-doped diamond coated fused silica substrates, have been deposited by plasma enhanced chemical vapour deposition. Boron-doped diamond thin films were deposited at temperature 720 °C on fused silica substrates with a Ti grid used to enhance electrical conductivity. a-SiC:H PIN diodes have been characterised by current-voltage measurements under AM1.5 illumination. For comparison, we deposited the same PIN structures on fluorine-doped tin oxide. Before deposition of the diode structures the surface morphology was studied by scanning electron microscopy, undoped layers deposited on the quartz substrates have been characterised by temperature resolved electrical resistivity, optical absorptance, Raman spectroscopy and photoluminescence.

Trvalý link: http://hdl.handle.net/11104/0314043