0536214 - FZÚ 2021 RIV NL eng J - Článek v odborném periodiku
Singh, M. - Santbergen, R. - Mazzarella, L. - Madrampazakis, A. - Yang, G. - Vismara, R. - Remeš, Zdeněk - Weeber, A. - Zeman, M. - Isabella, O.
Optical characterization of poly-SiO_x and poly-SiC_x carrier-selective passivating contacts.
Solar Energy Materials and Solar Cells. Roč. 210, Jun (2020), s. 1-11, č. článku 110507. ISSN 0927-0248. E-ISSN 1879-3398
Institucionální podpora: RVO:68378271
Klíčová slova: carrier-selective passivating contacts * absorption coefficients * photothermal deflection spectroscopy * reflection-transmission * poly-SiO_x * poly-SiC_x
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 7.267, rok: 2020 ; AIS: 1.128, rok: 2020
Způsob publikování: Open access
DOI: https://doi.org/10.1016/j.solmat.2020.110507

The optical modelling for optimizing high-efficiency c-Si solar cells endowed with poly-SiOx or poly-SiCx carrierselective passivating contacts (CSPCs) demands a thorough understanding of their optical properties, especially their absorption coefficient. Due to the mixed phase nature of these CSPCs, spectroscopic ellipsometry is unable to accurately detect the weak free carrier absorption (FCA) at long wavelengths. In this work, the absorption coefficient of doped poly-SiOx and poly-SiCx layers as function of oxygen and carbon content, respectively, was obtained for wavelengths (300–2000 nm) by means of two alternative techniques.
Trvalý link: http://hdl.handle.net/11104/0314032