Počet záznamů: 1  

Effect of substrate bias voltage on the composition, microstructure and mechanical properties of W-B-C coatings

  1. 1.
    0534048 - ÚJF 2021 RIV NL eng J - Článek v odborném periodiku
    Mirzaei, S. - Alishahi, M. - Souček, P. - Buršíková, V. - Zábranský, L. - Groener, L. - Burmeister, F. - Blug, B. - Daum, P. - Mikšová, Romana - Vašina, P.
    Effect of substrate bias voltage on the composition, microstructure and mechanical properties of W-B-C coatings.
    Applied Surface Science. Roč. 528, OCT (2020), č. článku 146966. ISSN 0169-4332. E-ISSN 1873-5584
    Grant CEP: GA MŠMT LM2015056; GA MŠMT EF16_013/0001812
    Institucionální podpora: RVO:61389005
    Klíčová slova: Magnetron sputtering * Protective coatings * Substrate bias * W-B-C alloys * Fracture resistance
    Obor OECD: Nuclear physics
    Impakt faktor: 6.707, rok: 2020
    Způsob publikování: Omezený přístup
    https://doi.org/10.1016/j.apsusc.2020.146966

    Commercial ceramic protective coatings usually exhibit high hardness, but low ductility impairs their performance and application-oriented properties. Accordingly, a state-of-the-art magnetron sputtered W-B-C coating can be a promising coating for the tooling industry due to its hard yet tough characteristics. In the present study, we have employed substrate biasing to enhance the delivered energy to the growing film and have investigated the effect of bias voltage on the structural and mechanical behavior of W-B-C coatings. The investigations revealed that increasing the substrate bias voltage enhanced the re-sputtering of B and C atoms and subsequently varied the chemical composition of the coatings and significantly decreased the growth rate. It also enhanced the crystallinity of the coatings. We demonstrate how the bias voltage led to an unusual transition from a featureless to a columnar microstructure. Furthermore, it was observed that as the substrate bias voltage increased from 0 V to - 125 V, the compositional and structural changes resulted in a slight decrease of the hardness, while a further increase in the bias voltage to - 200 V enhanced the hardness. This increase was attributed to the suppression of dislocation movement and grain boundary deformation processes by solute segregation and by lattice defects.
    Trvalý link: http://hdl.handle.net/11104/0312259

     
     
Počet záznamů: 1  

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