Počet záznamů: 1
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids
- 1.0533536 - FZÚ 2021 RIV DE eng J - Článek v odborném periodiku
Carrad, D.J. - Bjergfelt, M. - Kanne, T. - Aagesen, M. - Křížek, Filip - Fiordaliso, E.M. - Johnson, E. - Nygard, J. - Jespersen, T.S.
Shadow epitaxy for in situ growth of generic semiconductor/superconductor hybrids.
Advanced Materials. Roč. 32, č. 23 (2020), s. 1-9, č. článku 1908411. ISSN 0935-9648. E-ISSN 1521-4095
Institucionální podpora: RVO:68378271
Klíčová slova: nanoscale * epitaxial indium arsenide/aluminum heterostructures * InAs/Al hybrids
Obor OECD: Nano-materials (production and properties)
Impakt faktor: 30.849, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1002/adma.201908411
Uniform, defect‐free crystal interfaces and surfaces are crucial ingredients for realizing high‐performance nanoscale devices. A pertinent example is that advances in gate‐tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity‐induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes, these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations.
Trvalý link: http://hdl.handle.net/11104/0311908
Počet záznamů: 1