Luminescence spectroscopy and origin of luminescence centers in bi-doped materials

0533009 - FZÚ 2021 RIV CH eng J - Článek v odborném periodiku
Krasnikov, A. - Mihóková, Eva - Nikl, Martin - Zazubovich, S. - Zhydachevskyy, Ya.
Luminescence spectroscopy and origin of luminescence centers in bi-doped materials.
Crystals. Roč. 10, č. 3 (2020), s. 1-53, č. článku 208. ISSN 2073-4352. E-ISSN 2073-4352
Grant CEP: GA MŠMT(CZ) LO1409; GA MŠMT EF16_013/0001406
Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institucionální podpora: RVO:68378271
Klíčová slova: luminescence * excitons * defects * excited states * interactions * Bi-doped compounds * Bi centers * Bi³⁺ dimers
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.589, rok: 2020
Způsob publikování: Open access

In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds, discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence, consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited state address an influence of di erent interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

Trvalý link: http://hdl.handle.net/11104/0311510