New perspectives for heavily boron-doped diamond Raman spectrum analysis

0532981 - FZÚ 2021 RIV US eng J - Článek v odborném periodiku
Mortet, Vincent - Gregora, Ivan - Taylor, Andrew - Lambert, Nicolas - Ashcheulov, Petr - Gedeonová, Zuzana - Hubík, Pavel
New perspectives for heavily boron-doped diamond Raman spectrum analysis.
Carbon. Roč. 168, Oct (2020), s. 319-327. ISSN 0008-6223. E-ISSN 1873-3891
Grant CEP: GA ČR GA17-05259S; GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * boron-doped * Raman scattering * temperature dependence * Fano interaction
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 9.594, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.carbon.2020.06.075

Although Raman spectroscopy is a good tool for effective assessment of atomic boron concentration in diamond, determination of further physical properties using this non-destructive approach requires advancement in Raman analysis. In this work, we present an extended study of the Raman spectrum of boron-doped diamond, over a broad boron doping range and at increasing measurement temperature, based on the interaction between phonon and electronic Raman scattering effects. The presented analysis demonstrates the considerable contribution of electronic Raman scattering to the Raman spectrum and opens a practical route toward determination of additional boron-doped diamond properties, such as carrier concentration and carrier mobility.

Trvalý link: http://hdl.handle.net/11104/0311485