Laser-generated ns plasma pulses characterized using SiC Schottky diode

0531997 - ÚJF 2021 RIV DE eng J - Článek v odborném periodiku
Torrisi, L. - Torrisi, Alfio - Cutroneo, Mariapompea
Laser-generated ns plasma pulses characterized using SiC Schottky diode.
Contributions to Plasma Physics. Roč. 60, č. 7 (2020), č. článku 202000012. ISSN 0863-1042. E-ISSN 1521-3986
Institucionální podpora: RVO:61389005
Klíčová slova: laser-generated plasma * photopeak * SiC-TOF * SiC detector
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 1.563, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1002/ctpp.202000012

The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time-of-flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 10(10) W/cm(2)and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X-rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.
Trvalý link: http://hdl.handle.net/11104/0310608