Pulse measurements of small area thin film mu c-Si:H/ZnO:B photodiodes

0531981 - FZÚ 2021 RIV GB eng C - Konferenční příspěvek (zahraniční konf.)
Remeš, Zdeněk - Stuchlík, Jiří
Pulse measurements of small area thin film mu c-Si:H/ZnO:B photodiodes.
IOP Conference Series: Materials Science and Engineering. vol. 726. Bristol: IOP Publishing Ltd., 2020 - (Behulova, M.; Kozisek, Z.; Potucek, Z.), s. 1-8, č. článku 012011. ISSN 1757-8981.
[Joint Seminar on Development of Materials Science in Research and Education /29./ DMSRE 2019. Nova Lesna (SK), 02.09.2019-06.09.2019]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * a-Si:H * thin films * diodes
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We introduce a triggered optoelectronic system operating in a pulse mode in the near infrared and visible spectral range 0.75-3 eV. The system measures current-voltage (I-V) characteristics in dark and under visible light illumination as well as electroluminescence (EL) spectra of small area thin film photodiodes and light emitting diodes with size below 1 mm(2). The usefulness of the setup is demonstrated by measurement of optoelectronic properties of a hydrogenated microcrystalline silicon (mu c-Si:H) p-i-n diode deposited on a semi-transparent nanostructured ZnO:B electrode. No s-shaped I-V characteristics were observed under white illumination near an open circuit voltage Uoc indicating a negligible charge accumulation near mu c-Si:H/ZnO:B interface. The weak infrared EL correlates with the current density.
Trvalý link: http://hdl.handle.net/11104/0310602