Room temperature reactive deposition of InGaZnO and ZnSnO amorphous oxide semiconductors for flexible electronics

0531704 - FZÚ 2021 RIV CH eng J - Článek v odborném periodiku
Prusakova, L. - Hubík, Pavel - Aijaz, A. - Nyberg, T. - Kubart, T.
Room temperature reactive deposition of InGaZnO and ZnSnO amorphous oxide semiconductors for flexible electronics.
Coatings. Roč. 10, č. 1 (2020), s. 1-7, č. článku 2. E-ISSN 2079-6412
Institucionální podpora: RVO:68378271
Klíčová slova: amorphous oxide semiconductors * magnetron sputtering * InGaZnO * ZnSnO
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.881, rok: 2020
Způsob publikování: Open access

We report on magnetron sputtering of amorphous oxide semiconductors, interesting materials combining optical transparency with high electron mobility. Namely, we studied InGaZnO (IGZO) and ZnSnO (ZTO) thin films with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited an electron mobility of 18 cm2/Vs. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.
Trvalý link: http://hdl.handle.net/11104/0310321