Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

0525645 - ÚPT 2021 RIV CH eng J - Článek v odborném periodiku
Gablech, I. - Klempa, J. - Pekárek, J. - Vyroubal, P. - Hrabina, Jan - Holá, Miroslava - Kunz, J. - Brodsky, J. - Neužil, P.
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters.
Micromachines. Roč. 11, č. 2 (2020), č. článku 143. E-ISSN 2072-666X
Institucionální podpora: RVO:68081731
Klíčová slova: AlN * micro-electro-mechanical systems (MEMS) cantilever * complementary metal oxide semiconductor (CMOS) compatible * energy harvesting * high performance
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 2.891, rok: 2020
Způsob publikování: Open access
https://www.mdpi.com/2072-666X/11/2/143

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d(33) of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of approximate to 330 degrees C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.
Trvalý link: http://hdl.handle.net/11104/0309756