Functional nano-structuring of thin silicon nitride membranes

0525191 - ÚPT 2021 RIV SK eng J - Článek v odborném periodiku
Matějka, Milan - Krátký, Stanislav - Řiháček, Tomáš - Knápek, Alexandr - Kolařík, Vladimír
Functional nano-structuring of thin silicon nitride membranes.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 71, č. 2 (2020), s. 127-130. ISSN 1335-3632. E-ISSN 1339-309X
Grant CEP: GA TA ČR(CZ) TN01000008; GA MŠMT ED0017/01/01
Institucionální podpora: RVO:68081731
Klíčová slova: membrane * nano optical device * electron optics * electron beam lithography * silicon nitride * reactive ion etching * silicon etching * microfabrication
Obor OECD: Nano-processes (applications on nano-scale)
Impakt faktor: 0.647, rok: 2020
Způsob publikování: Open access
https://content.sciendo.com/view/journals/jee/71/2/article-p127.xml

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.
Trvalý link: http://hdl.handle.net/11104/0309382