Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC

0525120 - FZÚ 2021 RIV NL eng J - Článek v odborném periodiku
Savchenko, Dariia - Rodionov, V. - Prokhorov, Andriy - Lančok, Ján - Kalabukhova, E. - Shanina, B.
Impact of the dangling bond defects and grain boundaries on trapping recombination process in polycrystalline 3C SiC.
Journal of Alloys and Compounds. Roč. 823, May (2020), s. 1-8, č. článku 153752. ISSN 0925-8388. E-ISSN 1873-4669
Grant CEP: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institucionální podpora: RVO:68378271
Klíčová slova: semiconductors * grain boundaries * point defects * recombination and trapping * electron paramagnetic resonance * photoconductivity and photovoltaics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 5.316, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.jallcom.2020.153752

The bulk polycrystalline (pc) 3C SiC of n- and p-type have been studied by EPR, DC conductivity and photoconductivity (PC) methods. The energy level of the donor-like minority carrier traps located at the grain boundaries (GB) were obtained from measurements of DC conductivity and PC. The minority carrier traps assigned to C and Si dangling bonds were observed in the EPR spectra of n- and p-type pc-3C SiC. The persistent relaxation of PC was described by kinetic equations accounting the trapping, ionization, and recombination processes of non-equilibrium charge carriers. The main process responsible for the PC long-lived relaxation is trap-assisted electron-hole recombination in n-type pc-3C SiC and ionization of B acceptors, as well as the hole escape/capture at the B level in p-type pc-3C SiC. The differences in the PC relaxation process in n- and p-type pc-3C SiC were explained by the presence of the potential barrier at GB for the majority carriers capture in p-type pc-3C SiC.
Trvalý link: http://hdl.handle.net/11104/0309328