Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application

0522710 - FZÚ 2020 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Stuchlíková, The-Ha - Remeš, Zdeněk - Stuchlík, Jiří
Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic application.
NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. Ostrava: Tanger Ltd., 2019 - (Shrbená, J.), s. 226-229. ISBN 978-80-87294-89-5.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. Brno (CZ), 17.10.2018-19.10.2018]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) LTC17029; GA ČR GC16-10429J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: Ge NPs * a-Si:H * Sn NPs * diode structures * I-V characteristics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The plasma enhanced chemical vapour deposition was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220 °C to form nanoparticles on the surface of hydrogenated silicon thin films to prepare diodes. Formation of nanoparticles was additionally stimulated by plasma treatment through a low pressure hydrogen glow discharge. The diodes based on PIN diode structures with and without the embedded Ge or Sn nanoparticles were characterized by temperature dependence of electrical conductivity, activation energy of conductivity, measurement of volt-ampere characteristics in dark and under solar illumination

Trvalý link: http://hdl.handle.net/11104/0307160