MOVPE GaN/AlGaN HEMT nano-structures

0522076 - FZÚ 2020 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Kuldová, Karla - Hospodková, Alice - Pangrác, Jiří - Dominec, Filip - Humlíček, J. - Pelant, Ivan - Cibulka, Ondřej - Herynková, Kateřina
MOVPE GaN/AlGaN HEMT nano-structures.
NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. Ostrava: Tanger Ltd., 2019 - (Shrbená, J.), s. 30-35. ISBN 978-80-87294-89-5.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. Brno (CZ), 17.10.2018-19.10.2018]
Grant CEP: GA TA ČR TH02010014; GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: GaN * MOVPE * HEMT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.

Trvalý link: http://hdl.handle.net/11104/0306581