Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications

0522011 - FZÚ 2020 RIV GB eng M - Část monografie knihy
Hulicius, Eduard - Hospodková, Alice - Zíková, Markéta
Quantum dots.
Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications. Chichester: John Wiley & Sons Ltd., 2019 - (Capper, P.; Irvine, S.), s. 175-216. Wiley series in materials for electronic & optoelectronic applications. ISBN 9781119313014
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * quantum dots * growth parameters * self-assembled Starnski-Krastanov
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

This chapter focuses on quantum dots (QDs) embedded inside a semiconductor structure. It talks about metalorganic vapor phase epitaxy (MOVPE) QD preparation only. One can distinguish QD types according to growth modes, growth procedures, materials used, and structures with strain‐reducing layers, types of interfaces, and spatial arrangement of QDs (uncoordinated, array, and single/individual QDs). The three main growth technological procedures used for MOVPE preparation of QDs embedded in the structure are self‐assembled Stranski–Krastanov (SK) growth mode, formation of QDs in prepatterned inverted pyramids, and droplet epitaxy. The most widely used procedure is self‐assembling of QDs in SK growth mode. MOVPE growth parameters such as growth temperature, material type of precursors, reactor pressure, precursor flow ratio, total pressure and flow, complex purity of materials, precursors, and reactor setup can strongly influence the structure and device parameters, as well.

Trvalý link: http://hdl.handle.net/11104/0306541