Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry

0521995 - FZÚ 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Dubecký, F. - Kindl, Dobroslav - Hubík, Pavel - Mičušík, M. - Boháček, P. - Zaťko, B. - Gombia, E. - Kováč, J. - Nečas, V.
Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry.
APCOM 2019. New York: American Institute of Physics Inc., 2019 - (Jamnicky, I.; Vajda, J.; Sitek, J.), s. 1-4, č. článku 020010. ISBN 9780735418738.
[International Conference on Applied Physics of Condensed Matter /25./. Štrbské Pleso (SK), 19.06.2019-21.06.2019]
Institucionální podpora: RVO:68378271
Klíčová slova: SI-GaAs * heterojunction * I-V characteristics * capacitance
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://printorders.aip.org/proceedings/2131

Comparative study of AuGeNi, Pt, Nd and Gd contacts on semi-insulating (SI) GaAs with respect to the backside quasi-ohmic AuGeNi contact in symmetrical geometry is investigated. Fabricated diode structures are characterized by the current- and capacitance-voltage dependencies. Each of contacts gives an original set of characteristics and current lower that corresponding to the ohmic, bulk limited transport in the initial, low bias (<0.02 V) region. Observed increase of UV photosensitivity in the structure with Gd contact is explained by the formation of a heterojunction Au/Gd2O3/SI-GaAs.

Trvalý link: http://hdl.handle.net/11104/0306535