Towards a germanium and silicon laser: the history and the present

0521385 - FZÚ 2020 RIV CH eng J - Článek v odborném periodiku
Pelant, Ivan - Kůsová, Kateřina … celkem 5 autorů
Towards a germanium and silicon laser: the history and the present.
Crystals. Roč. 9, č. 12 (2019), s. 1-19, č. článku 624. ISSN 2073-4352. E-ISSN 2073-4352
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: lasing * silicon * germanium * indirect band gap * light emission * nanostructures
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.404, rok: 2019
Způsob publikování: Open access

Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots.
Trvalý link: http://hdl.handle.net/11104/0306016