Energy transfer channel between silicon nanocrystals and an optical center emitting above their bandgap

0521380 - FZÚ 2020 RIV NL eng J - Článek v odborném periodiku
Popelář, Tomáš - Ondič, Lukáš - Pelant, Ivan - Kůsová, Kateřina - Hiller, D.
Energy transfer channel between silicon nanocrystals and an optical center emitting above their bandgap.
Journal of Luminescence. Roč. 215, Nov (2019), s. 1-5, č. článku 116685. ISSN 0022-2313. E-ISSN 1872-7883
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nanocrystals * NBOHC * time-resolved luminescence * doping * energy transfer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.280, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.jlumin.2019.116685

This paper reports on the observation of an electronic energy transfer channel between silicon nanocrystals and the SiO2 matrix they are embedded in. This energy transfer manifests itself by photoluminescence at 650 nm, i.e. above the indirect band gap, in superlattices formed by alternating layers of P- or B-doped as well as undoped silicon nanocrystals (NCs) and stoichiometric SiO2 or SiOxNy.
Trvalý link: http://hdl.handle.net/11104/0306014