Damage formation and Er structural incorporation in m-plane and a-plane ZnO

0520868 - ÚJF 2020 RIV NL eng J - Článek v odborném periodiku
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Mikšová, Romana - Nekvindová, P. - Cajzl, J. - Rinkeviciute, E. - Akhmadaliev, S.
Damage formation and Er structural incorporation in m-plane and a-plane ZnO.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 460, č. 12 (2019), s. 38-46. ISSN 0168-583X. E-ISSN 1872-9584.
[28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM). Caen, 01.07.2018-07.07.2018]
Grant CEP: GA MŠMT EF16_013/0001812; GA MŠMT LM2015056; GA ČR GA18-03346S
Institucionální podpora: RVO:61389005
Klíčová slova: a-Plane and m-Plane ZnO doped * damage accumulation asymmetry * Er ion implantation in ZnO
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 1.270, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.nimb.2018.10.003

The various crystallographic orientations in semiconductors as ZnO exhibit different resistivity under the ion beam irradiation/implantation. Study of the various crystallographic orientations is mandatory for nanostructured semiconductor system development. This paper reports on the implantation damage build-up, structural modification and Er dopant position in a-plane and m-plane ZnO implanted with Er+ 400 keV ions at the ion fluences 5 x 10(14), 2.5 x 10(15), 5 x 10(15) cm(-2) and subsequently annealed at 600 degrees C in O-2 atmosphere using Rutherford Back-Scattering spectrometry (RBS) in channelling mode as well as using Raman spectroscopy. Strongly suppressed surface damage formation was observed in both crystallographic orientations compared to the deep damage growth with the increased ion implantation fluence. More progressive damage accumulation appeared in m-plane ZnO compared to a-plane ZnO. Simultaneously, the strong Er out-diffusion depth profile in m-plane ZnO accompanied by the damage accumulation at the surface was observed after the annealing. Contrary, the surface recovery accompanied by Er concentration depth profiles keeping a normal distribution with a small maximum shift to the surface was observed in a-plane ZnO. Different structure recovery and Er behaviour was evidenced in a-plane and m-plane ZnO by RBS-C, moreover Raman spectroscopy proved a lower damage at higher ion fluences introduced in a-plane ZnO compared to m-plane. The structure modifications were discussed in connection with a damage accumulation and Er concentration depth profile shape in various ZnO crystallographic orientations in as-implanted and as-annealed samples.
Trvalý link: http://hdl.handle.net/11104/0305522