Improvement of GaN crystalline quality by SiN.sub.x./sub. layer grown by MOVPE

0520842 - FZÚ 2020 RIV LT eng J - Článek v odborném periodiku
Hospodková, Alice - Slavická Zíková, Markéta - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla - Hájek, František - Dominec, Filip - Vetushka, Aliaksi - Hasenöhrl, S.
Improvement of GaN crystalline quality by SiN_x layer grown by MOVPE.
Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. ISSN 1648-8504. E-ISSN 1648-8504
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S; GA TA ČR TH02010014
Institucionální podpora: RVO:68378271
Klíčová slova: dislocations * MOVPE * GaN * SiN_x * photoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.966, rok: 2019
Způsob publikování: Open access

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation.
Trvalý link: http://hdl.handle.net/11104/0305500