Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits

0520830 - FZÚ 2020 RIV US eng A - Abstrakt
Vaněk, Tomáš - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Slavická Zíková, Markéta - Kretková, Tereza - Dominec, Filip - Hospodková, Alice
Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits.
Book of Abstracts of the International Conference on Crystal Growth and Epitaxy - ICCGE /19./. CTI Meeting Technology, 2019. ISBN 9780463615836.
[International Conference on Crystal Growth and Epitaxy - ICCGE /19./. 28.07.2019-02.08.2019, Keystone]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InGaN * quantum well * photoluminescence * cathodoluminescence
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Luminescence and morphology properties of thick InGaN/GaN multi-quantum well (MQW) heterostructures were investigated. Five samples with number of InGaN/GaN quantum wells (QWs) from 10 to 60 were prepared to achieve a thick active MQW layer. The increasing QWs number leads to accumulation of strain in InGaN/GaN layers and opening of new V-pits due to strain relaxation. The ratio between surfaces of the V-pits’ semipolar QWs and c-plane QWs is increasing because of the growing size and number of V-pits. The consequence is a nearly linear luminescence redshift of the upper c-plane QWs caused probably by increased QW thickness due to lateral migration of In atoms from semipolar to c-plane QWs and also decreasing photoluminescence (PL) intensity of upper QWs for QW number above 30.
Trvalý link: http://hdl.handle.net/11104/0305492