Modelling radiation damage to pixel sensors in the ATLAS detector

0520474 - FZÚ 2020 RIV GB eng J - Článek v odborném periodiku
Aaboud, M. - Aad, G. - Abbott, B. - Chudoba, Jiří - Hejbal, Jiří - Hladík, Ondřej - Jačka, Petr - Jakoubek, Tomáš - Kepka, Oldřich - Kroll, Jiří - Kupčo, Alexander - Lokajíček, Miloš - Lysák, Roman - Marčišovský, Michal - Mikeštíková, Marcela - Němeček, Stanislav - Penc, Ondřej - Šícho, Petr - Staroba, Pavel - Svatoš, Michal - Taševský, Marek … celkem 2880 autorů
Modelling radiation damage to pixel sensors in the ATLAS detector.
Journal of Instrumentation. Roč. 14, č. 6 (2019), s. 1-53, č. článku P06012. ISSN 1748-0221. E-ISSN 1748-0221
Grant CEP: GA MŠMT LM2015058
Institucionální podpora: RVO:68378271
Klíčová slova: detector modelling and simulations II * electric fields * charge transport * multiplication and induction * pulse formation * electron emission
Obor OECD: Particles and field physics
Impakt faktor: 1.454, rok: 2019
Způsob publikování: Open access

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 1015 1 MeV neq/cm2).

Trvalý link: http://hdl.handle.net/11104/0305145