Co.sub.3./sub.O.sub.4./sub. thin films prepared by hollow cathode discharge

0520354 - FZÚ 2020 RIV CH eng J - Článek v odborném periodiku
Olejníček, Jiří - Šmíd, Jiří - Perekrestov, Roman - Kšírová, P. - Rathouský, Jiří - Kohout, Michal - Dvořáková, M. - Kment, Štěpán - Jurek, Karel - Čada, Martin - Hubička, Zdeněk
Co₃O₄ thin films prepared by hollow cathode discharge.
Surface and Coatings Technology. Roč. 366, May (2019), s. 303-310. ISSN 0257-8972
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA17-08389S; GA MŠMT(CZ) LO1409
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: cobalt oxide * Co₃O₄ * hollow cathode discharge * magnetron sputtering * thin films
Obor OECD: Fluids and plasma physics (including surface physics); Physical chemistry (UFCH-W)
Impakt faktor: 3.784, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.surfcoat.2019.03.010

Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process.
Trvalý link: http://hdl.handle.net/11104/0305035