Temperature dependence of the urbach energy in lead iodide perovskites

0520320 - FZÚ 2020 RIV US eng J - Článek v odborném periodiku
Ledinský, Martin - Schönfeldová, Tereza - Holovský, Jakub - Aydin, E. - Hájková, Zdeňka - Landová, Lucie - Neykova, Neda - Fejfar, Antonín - De Wolf, S.
Temperature dependence of the urbach energy in lead iodide perovskites.
Journal of Physical Chemistry Letters. Roč. 10, č. 6 (2019), s. 1368-1373. ISSN 1948-7185
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GJ17-26041Y
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: optical-absorption edge * solar-cells * photocurrent spectroscopy * electronic-structure * halide perovskites * disorder limit
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.710, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acs.jpclett.9b00138

To gain insight into the properties of photovoltaic and light-emitting materials, detailed information about their optical absorption spectra is essential. Here, we elucidate the temperature dependence of such spectra for methylammonium lead iodide (CH3NH3PbI3), with specific attention to its sub-band gap absorption edge (often termed Urbach energy). On the basis of these data, we first find clear further evidence for the universality of the correlation between the Urbach energy and open-circuit voltage losses of solar cells. Second, we find that for CH3NH3PbI3 the static, temperature-independent, contribution of the Urbach energy is 3.8 ± 0.7 meV, which is smaller than that of crystalline silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN), underlining the remarkable optoelectronic properties of perovskites.
Trvalý link: http://hdl.handle.net/11104/0305005