Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films

0520201 - FZÚ 2020 RIV NL eng J - Článek v odborném periodiku
Fait, Jan - Potocký, Štěpán - Stehlík, Štěpán - Stuchlík, Jiří - Artemenko, Anna - Kromka, Alexander - Rezek, B.
Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films.
Applied Surface Science. Roč. 480, June (2019), s. 1008-1013. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA17-19968S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: spontaneous nucleation * diamond * hydrogenated amorphous silicon * selective growth * focused microwave CVD
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.182, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2019.03.064

Selective deposition of diamond allows bottom-up growth of diamond nanostructures and nanoscale devices. However, it remains challenging to reduce the size of the patterns and to suppress parasitic spontaneous nucleation. We show here that thin layers of hydrogenated amorphous silicon (down to 40 nm) efficiently suppress spontaneous nucleation of diamond. The suppression of diamond nucleation does not depend on the substrate materials below hydrogenated amorphous silicon (Si, SiO2, Pt, Ni). We attribute the suppressed diamond nucleation to surface disorder on atomic scale. By using a structured layer of hydrogenated amorphous silicon, highly selective growth of diamond micro-patterns with optically active SiV centers by low-temperature microwave plasma chemical vapor deposition is achieved.
Trvalý link: http://hdl.handle.net/11104/0304888