A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies

0519329 - FZÚ 2020 RIV GB eng J - Článek v odborném periodiku
Marčišovská, Mária - Benka, T. - Havránek, Miroslav - Hejtmánek, M. - Janoška, Z. - Kafka, V. - Marcisovský, M. - Neue, G. - Popule, Jiří - Svihra, P. - Tomášek, L. - Vančura, P. - Vrba, V.
A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies.
Journal of Instrumentation. Roč. 13, č. 12 (2018), s. 1-10, č. článku C12003. ISSN 1748-0221. E-ISSN 1748-0221
Institucionální podpora: RVO:68378271
Klíčová slova: radiation damage to electronic components * radiation-hard detectors * radiation-hard electronics * solid state detectors
Obor OECD: Particles and field physics
Impakt faktor: 1.366, rok: 2018
Způsob publikování: Omezený přístup
https://doi.org/10.1088/1748-0221/13/12/c12003

The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI MOS technology. Ahigh-flux Co-60 medical radiation source with a dose rate of 460 Gy.min(-1) was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.
Trvalý link: http://hdl.handle.net/11104/0304325