Počet záznamů: 1  

On low-temperature luminescence quenching in Gd.sub.3./sub.(Ga,Al).sub.5./sub.O.sub.12./sub.:Ce crystals

  1. 1.
    0517970 - FZÚ 2020 RIV NL eng J - Článek v odborném periodiku
    Boháček, Pavel - Krasnikov, A. - Nikl, Martin - Zazubovich, S. - Zolotarjovs, A.
    On low-temperature luminescence quenching in Gd3(Ga,Al)5O12:Ce crystals.
    Optical Materials. Roč. 95, Sep (2019), s. 1-5, č. článku 109252. ISSN 0925-3467. E-ISSN 1873-1252
    Grant CEP: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
    Grant ostatní: OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
    Institucionální podpora: RVO:68378271
    Klíčová slova: luminescence * low-temperature quenching * energy transfer * Gd3(Ga,Al)5O12:Ce
    Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impakt faktor: 2.779, rok: 2019
    Způsob publikování: Omezený přístup
    https://doi.org/10.1016/j.optmat.2019.109252

    Temperature dependences of the photoluminescence and X-ray excited luminescence intensity and thermally stimulated luminescence glow curves are measured in the 4.2–300 K temperature range for the undoped and Ce3+ - doped Gd3(Ga,Al)5O12 crystals. The conclusion is made that no low-temperature quenching of the Ce3+ -related photoluminescence takes place. In both the undoped and the Ce3+ - doped crystals, temperature dependences of the X-ray excited recombination luminescence intensity correlate with the position and shape of thermally stimulated luminescence glow curve peaks of the hole origin. Low-temperature quenching of the X-ray excited luminescence in these crystals is explained by the fact that at low temperatures, free holes are trapped at oxygen ions while electrons are trapped at various intrinsic defects. In Ce3+ - doped Gd3(Ga,Al)5O12 crystals, thermally stimulated release of the trapped holes and electrons and their subsequent recombination at Ce3+ ions result in the enhancement of the Ce3+ - related electron recombination luminescence with the increasing temperature in the 10–180 K range.
    Trvalý link: http://hdl.handle.net/11104/0303186

     
     
Počet záznamů: 1  

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