Optical contrast and raman spectroscopy techniques applied to few-layer 2d hexagonal boron nitride

0517722 - FZÚ 2020 RIV CH eng J - Článek v odborném periodiku
Krečmarová, M. - Andres-Penares, D. - Fekete, Ladislav - Ashcheulov, Petr - Molina-Sánchez, A. - Canet-Albiach, R. - Gregora, Ivan - Mortet, Vincent - Martínez-Pastor, J.P. - Sánchez-Royo, J.F.
Optical contrast and raman spectroscopy techniques applied to few-layer 2d hexagonal boron nitride.
Nanomaterials. Roč. 9, č. 7 (2019), s. 1-10, č. článku 1047. E-ISSN 2079-4991
Grant CEP: GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088; GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant ostatní: AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institucionální podpora: RVO:68378271
Klíčová slova: hexagonal boron nitride * optical contrast * Raman spectroscopy * two-dimensional materials
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.324, rok: 2019
Způsob publikování: Open access

The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of hBN monolayers in the few-layer thickness range. We also used bandpass filters (500–650 nm) to improve the effectiveness of the optical contrast methods for thickness estimations.
Trvalý link: http://hdl.handle.net/11104/0303013