Silicon carbide detectors for diagnostics of laser-produced plasmas

0517693 - ÚJF 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Torrisi, Alfio - Wachulak, P. W. - Fiedorowicz, H. - Torrisi, L.
Silicon carbide detectors for diagnostics of laser-produced plasmas.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 11032. Bellingham: SPIE, 2019, č. článku 110320W. ISBN 9781510627307. ISSN 0277-786X.
[EUV and X-Ray Optics: Synergy Between Laboratory and Space VI 2019. Praha (CZ), 03.04.2019-04.04.2019]
Grant CEP: GA ČR GA19-02804S
Institucionální podpora: RVO:61389005
Klíčová slova: ion sources * SiC detectors * laser produced plasmas
Obor OECD: Fluids and plasma physics (including surface physics)

Recently developed silicon carbide (SiC) detectors have been employed to study pulsed laser plasmas produced by irradiation of a double-stream gas puff target with nanosecond laser pulses. The plasma emitted by a gas-puff target source in the soft X-ray (SXR, λ = 0.1 - 10 nm) and extreme ultraviolet (EUV, λ = 10 - 120 nm) ranges was monitored with silicon carbide (SiC) detectors and compared with a commercial, calibrated silicon (Si) photodiode (AXUV-HS1). Different filters have been used to select the emission in different wavelength ranges from the broad-band emission of the plasma. This work shows the applicability of SiC detectors to measure the SXR and EUV ns pulses from the plasma, useful for monitoring and optimizing the gas-puff laser-plasma sources developed at IOE-MUT, in Warsaw (Poland). Some aspects relative to the plasma stability as well as characterization of the plasma source (i.e. the overall evaluation of the signal and the time trace profile) will be presented and discussed.
Trvalý link: http://hdl.handle.net/11104/0303046