Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

0511336 - FZÚ 2020 RIV DE eng J - Článek v odborném periodiku
Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Dragounová, K. - Ashcheulov, Petr - Taylor, Andrew - Mortet, Vincent - Poruba, Aleš
Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond.
Physica Status Solidi A. Roč. 216, č. 21 (2019), s. 1-6, č. článku 1900241. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: silicon carbide * boron-doped diamond * diode * photothermal deflection spectroscopy * Raman spectroscopy * infrared spectroscopy * current-voltage characteristics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.759, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1002/pssa.201900241

Hydrogenated amorphous substoichiometric silicon carbide (a-Si1-xCx:H) thin films and diodes with low carbon content were prepared from a mixture of H2, SiH4 and CH4 by plasma enhanced chemical vapour deposition at a relatively high temperature of 450C on semi-transparent conductive boron-doped nanocrystalline diamond (B-NCD) with an underlying Ti grid. Vibration spectra indicate that CH4 prevents Si crystallization and confirms an increasing carbon content up to x=0.1 for samples grown with SiH4/CH4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si1-xCx:H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination an energy conversion efficiency of 4% is limited by a low fill factor, the high serial resistivity of B-NCD electrode and the s-shape near the open circuit voltage.

Trvalý link: http://hdl.handle.net/11104/0301632