Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer

0511318 - FZÚ 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Stuckelberger, J. - Nogay, G. - Wyss, P. - Lehmann, M. - Allebé, C. - Debrot, F. - Ledinský, Martin - Fejfar, Antonín - Despeisse, M. - Haug, F.J. - Löper, P. - Ballif, C.
Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer.
IEEE Photovoltaic Specialists Conference (PVSC 2016) /43./. New York: IEEE, 2016, s. 2518-2521. ISBN 978-1-5090-2724-8. ISSN 0160-8371.
[IEEE Photovoltaic Specialists Conference (PVSC 2016) /43./. Portland (US), 05.06.2016-10.06.2016]
Grant CEP: GA MŠMT LM2015087
Institucionální podpora: RVO:68378271
Klíčová slova: silicon wafers * solar cells * crystalline layers
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Passivating contacts based on nanostructured highly crystalline thin silicon layers are presented. The contact layer stack is optimized towards full crystallinity targeting high transparency. We present an optimization of an electron selective contact and demonstrate excellent surface passivation on n-type and also p-type wafers with such highly crystalline layers. On n-type wafers, the electron selective contact attains an implied open-circuit voltage of 718 mV at an annealing temperature of 925 degrees C. For p-type wafers we find optimum conditions between 850 degrees C and 900 degrees C attaining an implied open-circuit voltage of 723 mV. First tests with hole-selective contacts have yielded an implied open-circuit voltage of up to 676 mV after thermal annealing at 800 degrees C.
Trvalý link: http://hdl.handle.net/11104/0301618