Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells

0511249 - FZÚ 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Lőper, P. - Nogay, G. - Wyss, P. - Hývl, Matěj - Procel, P. - Stuckelberger, J. - Ingenito, A. - Mack, I. - Jeangros, Q. - Ledinský, Martin - Fejfar, Antonín - Allebé, C. - Horzel, J. - Despeisse, M. - Crupi, F. - Haug, F.J. - Ballif, C.
Exploring silicon carbide- and silicon oxide-based layer stacks for passivating contacts to silicon solar cells.
IEEE Photovoltaics Specialists Conference (PVSC 2017) /44./. New York: IEEE, 2017, s. 2073-2075. ISBN 978-1-5090-5605-7. ISSN 0160-8371.
[IEEE Photovoltaic Specialist Conference (PVSC) /44./. Washington, DC (US), 25.06.2017-30.06.2017]
Institucionální podpora: RVO:68378271
Klíčová slova: energy and fuels * engineering * materials science * physics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://ieeexplore.ieee.org/document/8366518

We present the development of passivating contacts for high-efficiency silicon solar cells using silicon oxide (SiOx) and silicon carbide (SiCx)-based layers. We discuss a comprehensive optimization of a SiCx-based passivating hole contact reaching implied open circuit voltages >715 mV. In addition, we introduce a passivating hole contact based on nanocrystalline SiOx (nc-SiOx) targeting compatibility with higher process temperatures as well as increased optical transparency for front side application.
Trvalý link: http://hdl.handle.net/11104/0301627