Kelvin probe force microscopy and calculation of charge transport in a graphene/silicon dioxide system at different relative humidity

0511229 - FZÚ 2020 RIV US eng J - Článek v odborném periodiku
Konečny, M. - Bartošík, M. - Mach, J. - Švarc, V. - Nezval, D. - Piastek, J. - Procházka, P. - Cahlík, Aleš - Šikola, T.
Kelvin probe force microscopy and calculation of charge transport in a graphene/silicon dioxide system at different relative humidity.
ACS Applied Materials and Interfaces. Roč. 10, č. 14 (2018), s. 11987-11994. ISSN 1944-8244. E-ISSN 1944-8252
Institucionální podpora: RVO:68378271
Klíčová slova: graphene * silicon dioxide * KPFM * RH * BET * electron hopping
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 8.456, rok: 2018
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acsami.7b18041

The article shows how the dynamic mapping ofsurface potential (SP) measured by Kelvin probe forcemicroscopy (KPFM) in combination with calculation by adiffusion-like equation and the theory based on the Brunauer−Emmett−Teller (BET) model of water condensation andelectron hopping can provide the information concerning theresistivity of low conductive surfaces and their water coverage.This is enabled by a study of charge transport between isolatedand grounded graphene sheets on a silicon dioxide surface atdifferent relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In theexperimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy(AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM.
Trvalý link: http://hdl.handle.net/11104/0301553