Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

0511161 - FZÚ 2020 RIV GB eng J - Článek v odborném periodiku
Su, X. - Zeng, X. - Němec, Hynek - Zou, X.S. - Zhang, W. - Borgström, M.T. - Yartsev, A.
Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires.
Nanoscale. Roč. 11, č. 40 (2019), s. 18550-18558. ISSN 2040-3364. E-ISSN 2040-3372
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA17-03662S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: Inp nanowires * electron transmission * terahertz spectroscopy * efficiency * photoconductivity * ultrafast dynamics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.895, rok: 2019
Způsob publikování: Open access

Introduction of in situ HCl etching to an epitaxial growth process has been shown to suppress radial growth and improve the morphology and optical properties of nanowires. We investigate the dynamics of photogenerated charge carriers in a series of InP nanowires grown with varied HCl fluxes. A variety of time resolved methods was combined to investigate charge trapping and recombination processes in the nanowires. We found that the photoluminescence decay is dominated by the decay of the mobile hole population due to trapping, which is affected by the HCl etching. The hole trapping rate is in general faster at the top of the nanowires than at the bottom. In contrast, electrons remain highly mobile until they recombine nonradiatively with the trapped holes. The slowest hole trapping as well as the least efficient non-radiative recombination was recorded for etching using the HCl molar fraction of χHCl = 5.4e−5.

Trvalý link: http://hdl.handle.net/11104/0301494