Q-switching of a Tm,Ho:KLu(WO.sub.4./sub.).sub.2./sub. microchip laser by a graphene-based saturable absorber

0510653 - FZÚ 2020 RIV DE eng J - Článek v odborném periodiku
Serres, J.M. - Loiko, P. - Mateos, X. - Jambunathan, Venkatesan - Yumashev, K. - Griebner, U. - Petrov, V. - Aguilo, M. - Díaz, F.
Q-switching of a Tm,Ho:KLu(WO₄)₂ microchip laser by a graphene-based saturable absorber.
Laser Physics Letters. Roč. 13, č. 2 (2016), s. 1-5, č. článku 025801. ISSN 1612-2011. E-ISSN 1612-202X
Grant CEP: GA MŠMT LO1602
Grant ostatní: AV ČR(CZ) VP17
Institucionální podpora: RVO:68378271
Klíčová slova: Q-switched laser * graphene * double tungstates * holmium ion * energy transfer
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 2.537, rok: 2016
Způsob publikování: Omezený přístup
https://doi.org/10.1088/1612-2011/13/2/025801

The first Ho microchip laser passively Q-switched using a graphene-based saturable absorber is demonstrated based on a Tm,Ho:KLu(WO4)2 crystal cut along the Ng-axis. A maximum average output power of 74 mW is extracted from the diode-pumped laser at 2061 nm with a slope efficiency of 4%. Pulses as short as 200 ns with an energy of ~0.2 μJ are obtained at a repetition rate of 340 kHz. The energy transfer (ET), 3 F4 (Tm3+) ↔ 5 I7 (Ho3+) is studied, yielding ET parameters of P28 = 1.69 and P71 = 0.15 × 10−22 cm3 μs−1 , revealing the strong prevalence of direct ET.
Trvalý link: http://hdl.handle.net/11104/0301074