Passive Q-switching of a Tm,Ho:KLu(WO.sub.4./sub.).sub.2./sub. microchip laser by a Cr:ZnS saturable absorber

0510642 - FZÚ 2020 RIV US eng J - Článek v odborném periodiku
Serres, J.M. - Loiko, P. - Mateos, X. - Jambunathan, Venkatesan - Yasukevich, A.S. - Yumashev, K.V. - Petrov, V. - Griebner, U. - Aguilo, M. - Díaz, F.
Passive Q-switching of a Tm,Ho:KLu(WO₄)₂ microchip laser by a Cr:ZnS saturable absorber.
Applied Optics. Roč. 55, č. 14 (2016), s. 3757-3763. ISSN 1559-128X. E-ISSN 2155-3165
Grant CEP: GA MŠMT LO1602; GA TA ČR(CZ) TF03000055
Institucionální podpora: RVO:68378271
Klíčová slova: infrared and far-infrared lasers * lasers * Q-switched * laser materials
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 1.650, rok: 2016
Způsob publikování: Omezený přístup
https://doi.org/10.1364/ao.55.003757

A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively ????-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a ????-switching conversion efficiency of 58%. The pulse characteristics were 14  ns/9  μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9  ns/10.4  μJ/8.2  kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively ????-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.

Trvalý link: http://hdl.handle.net/11104/0301061