Non-diffusional growth mechanism of I-1 basal stacking-faults inside twins in hcp metals

0509770 - ÚFM 2020 RIV GB eng J - Článek v odborném periodiku
Ostapovets, Andriy - Serra, A. - Pond, R. C.
Non-diffusional growth mechanism of I-1 basal stacking-faults inside twins in hcp metals.
Scripta Materialia. Roč. 172, NOV (2019), s. 149-153. ISSN 1359-6462. E-ISSN 1872-8456
Grant CEP: GA ČR(CZ) GA18-07140S; GA MŠMT(CZ) LQ1601
Institucionální podpora: RVO:68081723
Klíčová slova: twinning dislocations * 10(1)over-bar2 twin * magnesium * defects * interface * Twinning * Plastic deformation * Grain interfaces * Interface defects * Dislocations
Obor OECD: Materials engineering
Impakt faktor: 5.079, rok: 2019
Způsob publikování: Omezený přístup
https://www.sciencedirect.com/science/article/pii/S1359646219304324?via%3Dihub

Deformation twins in magnesium exhibit considerable densities of I-1 basal-plane stacking-faults. Since these faults generally transect their host twin, they presumably lengthen concommitantly with boundary migration during twin growth. We investigate this process using atomic-scale simulation for {10 (1) over bar2} and {10 (1) over bar1} twinning. It is demonstrated first that the intersection of a stacking-fault with a stationary twin boundary is delineated by a sessile imperfect disconnection. Subsequently, by applying a shear strain, we stimulate twin growth by the passage of twinning disconnections along twin boundaries, and show that these are able to propagate through such pre-existing imperfect disconnections in a conservative manner. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.
Trvalý link: http://hdl.handle.net/11104/0300839