Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs

0509479 - FZÚ 2020 RIV NL eng J - Článek v odborném periodiku
Dubecký, F. - Zat'ko, B. - Kolesár, V. - Kindl, Dobroslav - Hubík, Pavel - Gombia, E. - Dubecký, M.
Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs.
Applied Surface Science. Roč. 467, Feb (2019), s. 1219-1225. ISSN 0169-4332. E-ISSN 1873-5584
Institucionální podpora: RVO:68378271
Klíčová slova: semi-insulating GaAs * metal-semiconductor contact * metal-oxide-semiconductor contact * charge collection efficiency
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.182, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2018.10.164

We performed a comparative study of diode structures based on semi-insulating (SI) GaAs with evaporated Mg vs. Pt contacts. The electric field strength in the vicinity of the contacts is inferred from the detection of α-particles emitted from 241Am radioisotope. It is shown that at zero bias, the structure with Mg-based contacts gives comparatively small signal implying an ohmic behaviour. Contrary, the structure with Pt contacts reveals the presence of a non-negligible electric field near the contacts at zero bias voltage, thus indicating the existence of a space charge region near the interface. The results are supplemented by atomistic electronic structure modeling of idealized GaAs/Pt vs. GaAs/Mg and GaAs/MgO interfaces.

Trvalý link: http://hdl.handle.net/11104/0300223